UC Case No. 2019-702
SUMMARY
Researchers in the UCLA Department of Electric and Computer Engineering have designed a new on-chip sensor to prevent electrostatic discharge, which would largely enhance the life and durability of integrated circuits.
BACKGROUND
Electrostatic discharge (ESD) in integrated circuits (IC) occurs due to electrostatic charge transfer between two components in close proximity. This fast (~150 ns) and transient phenomenon can cause serious damage and degrade the performance of affected ICs, leading to either partial or complete device failure - and can occur at any stage of IC production, test, assembly, and usage. About 35% of IC field returns are reported to be ESD induced, with annual costs estimated to be several billions of dollars. There is a need to develop sensors that can detect when a device has been compromised due to an ESD event.
INNOVATION
Researchers at UCLA have developed two types of on-chip sensors that can track the electrostatic history of an IC from manufacturing to end-of-life. Both sensors have been successfully simulated, fabricated and experimentally characterized. The first type of sensor, the variable dielectric width capacitor, can detect high ESD events of voltages greater than or equal to 40 V. The second type of sensor, a vertical metal-oxide-semiconductor (MOS) capacitor, can detect ESD events ranging from 6 V to 6 V granularity.
POTENTIAL APPLICATIONS
• Integrated circuits protection
• Electrostatic discharge detection
• Integrated circuits quality inspection
ADVANTAGES
• Compact size
• Fast and precise detection
• Durability
DEVELOPMENT-TO-DATE
The newly designed sensors are manufactured and tested on-the-chip.