2010-474 GRAPHENE NANOMESH AS A CONTINUOUS SEMICONDUCTING THIN FILM FOR LARGE SCALE FIELD EFFECT TRANSISTORS

Graphene Nanomesh as a Continuous Semiconducting Thin Film for Large Scale Field Effect Transistors

UC Case No. 2010-474

 

SUMMARY:

Researchers in the UCLA Department of Chemistry and Biochemistry have developed a standardized approach to fabricate uniform and semiconducting Graphene Nanomesh (GNM) thin films.

 

BACKGROUND:

With advancements in electronics, semiconductors that are light weight, energy efficient and that have low toxicity are necessary to continue improving that functional ability to handle and amplify signals. Graphene is an ideal material for modern semiconductor applications but fabricating a graphene-based semiconducting film that can effectively amplify or switch electronic signals has posed many challenges. Recently, the formation of Graphene Nanoribbons (GNRs) has shown sufficient semiconducting properties but has limited driving current, limiting its application in circuits. New methods to improve sensitivity and versatility of graphene could open up the potential of graphene as a semiconductor.

 

INNOVATION:

UCLA researchers have developed a new and standardized lithography processing method to fabricate uniform, continuous semiconducting thin film graphene nanostructures, GNMs. The simple fabrication technique allows for great versatility in controlling the electronic properties. When tested as the semiconducting channel of Field Effect Transistors, GNM-based devices delivered ~100 times greater current than individual GNR devices. Coupled with the ability to create graphene over large-area substrates, the proposed method enables practical application of graphene for future electronics.

 

POTENTIAL APPLICATIONS:

•       Ultra-sensitive biosensor

•       Compact integrated circuits

•       Commercially available spintronics

 

ADVANTAGES:

•       Standard semiconductor processing methods

•       Potential biocompatibility

•       Room temperature operations

•       Tunable electronic properties

 

DEVELOPMENT-TO-DATE:

Method has been successfully tested, published, and has an issued patent.

 

RELATED MATERIALS:

•       Bai J, Zhong X, Jiang S, Huang Y, Duan X. Graphene nanomesh. Nat Nanotechnol. 2010;5(3):190–194. doi:10.1038/nnano.2010.8

Patent Information:
For More Information:
Greg Markiewicz
Business Development Officer
greg.markiewicz@tdg.ucla.edu
Inventors:
Xiangfeng Duan
Yu Huang
Jingwei Bai