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2016-684 Resistive Memory Write and Read Assistance using Negative Differential Resistance Device

SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a new design of read and write circuitry using negative differential resistance devices to improve the performance of resistive memories.BACKGROUNDEmerging non-volatile resistive memories including phase-change memory (PCM), spin-transfer torque magnetic random access...

Published: 11/13/2024 | Inventor(s): Puneet Gupta, Andrew Pan, Shaodi Wang

Keywords(s): Electronics & Semiconductors

Category(s): Electrical > Electronics & Semiconductors, Materials > Semiconducting Materials