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2020-945 Epitaxy-Enabled Substrate Transfer

SUMMARYUCLA researchers in the Department of Materials Science and Engineering have developed a cost-effective and damage-free method to transfer a selective-area doping structure from one substrate to another via epitaxy.BACKGROUNDDoping is ubiquitous throughout consumer electronics. Doped GaN (Gallium Nitride) is particularly useful owing to the ultra-high...

Published: 7/19/2023 | Inventor(s): Ya-Hong Xie, Jia Wang, Hiroshi Amano

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Category(s): Materials > Functional Materials, Materials > Semiconducting Materials, Materials > Nanotechnology, Electrical > Electronics & Semiconductors, Electrical > Sensors