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2014-834 FAST AND LOW-POWER SENSE AMPLIFIER AND WRITING CIRCUIT FOR HIGH-SPEED MRAM

Fast And Low-Power Sense Amplifier And Writing Circuit For High-Speed MRAMSUMMARYThe Device Research Laboratory at UCLA’s Electrical Engineering and Computer Science Department has developed the first specialized control circuit for VCMA-based MRAM devices that is high-speed, low error, and low power.BACKGROUNDMagnetoresistive random access memory...

Published: 7/19/2023 | Inventor(s): Kang Wang, Pedram Khalili Amiri, Juan Alzate Vinasco, Hochul Lee

Keywords(s): Electronics & Semiconductors

Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits

Voltage-Controlled Magnetic Memory Element With Canted Magnetization

SummaryUCLA researchers in the Department of Electrical Engineering have developed a method for voltage-controlled switching of the magnetization direction in MeRAM circuits.BackgroundNew random-access memory technologies have been emerging as computer data storage must keep up with the increasing amount of data being generated and processed. One emerging...

Published: 7/19/2023 | Inventor(s): Kang Wang, Pedram Khalili Amiri, Juan Alzate Vinasco

Keywords(s): Electronics & Semiconductors

Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits, Electrical > Electronics & Semiconductors > Memory