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2012-876 A READ-DISTURBANCE-FREE NONVOLATILE CONTENT ADRESSABLE MEMORY

Case No. 2012-876SUMMARYUCLA researchers in the Department of Electrical Engineering have developed read-disturbance-free content addressable memory (CAM) using voltage controlled magneto-electric tunnel junctions (MEJs).BACKGROUNDThe electronics industry continuously demands for memory devices with higher density, faster speed, and better reliability....

Published: 7/19/2023 | Inventor(s): Kang Wang, Pedram Khalili Amiri, Dejan Markovic, Richard Dorrance

Keywords(s): Electronics & Semiconductors, Memory

Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits, Electrical > Electronics & Semiconductors > Memory

2012-875 A NONVOLATILE MAGNETOELECTRIC RANDOM ACCESS MEMORY CIRCUIT

Case No. 2012-875SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a nonvolatile random-access memory circuit (MeRAM) that is very dense, fast, and consumes extremely low power.BACKGROUNDRandom-access memory (RAM) is a form of computer data storage that directly affects a computer’s speed. As society becomes heavily...

Published: 7/19/2023 | Inventor(s): Kang Wang, Dejan Markovic, Pedram Khalili Amiri, Richard Dorrance

Keywords(s): Electronics & Semiconductors, Memory

Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits, Electrical > Electronics & Semiconductors > Memory