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2014-322 MAGNETIC MEMORY BITS WITH PERPENDICULAR MAGNETIZATION SWITCHED BY CURRENT-INDUCED SPIN-ORBIT TORQUES
Magnetic Memory Bits with Perpendicular Magnetization Switched By Current-Induced Spin-Orbit TorquesTech ID: 30203 / UC Case 2014-322-0SUMMARYUCLA researchers in the Department of Electrical and Computer Engineering have developed a novel spin-orbit-torque (SOT)-controlled magnetic random access memory driven by in-plane currents.BACKGROUNDMagnetization...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Memory
2014-141 METHODS AND SYSTEMS FOR MAGNETOELECTRONIC ELEMENTS AND ARRAYS
Case No. 2014-141SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a magnetoelectric memory array, which uses a crossbar architecture to achieve high density.BACKGROUNDExcessive power consumption and manufacturing costs have become chief roadblocks to the further scaling of semiconductors, electronics and systems that...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
,
Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2014-140 MAGNETOELECTRIC DEVICE HAVING TWO DIELECTRIC BARRIERS
Magnetoelectric Device with Two Dielectric BarriersTech ID: 30169 / UC Case 2014-140-0SUMMARYUCLA researchers in the Department of Electrical and Computer Engineering have developed a magnetoelectric memory device that uses two dielectric barriers for improved voltage-controlled magnetic anisotropy (VCMA) and tunnel magnetoresistance (TMR) properties.BACKGROUNDNew...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2012-876 A READ-DISTURBANCE-FREE NONVOLATILE CONTENT ADRESSABLE MEMORY
Case No. 2012-876SUMMARYUCLA researchers in the Department of Electrical Engineering have developed read-disturbance-free content addressable memory (CAM) using voltage controlled magneto-electric tunnel junctions (MEJs).BACKGROUNDThe electronics industry continuously demands for memory devices with higher density, faster speed, and better reliability....
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Dejan Markovic
,
Richard Dorrance
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2012-875 A NONVOLATILE MAGNETOELECTRIC RANDOM ACCESS MEMORY CIRCUIT
Case No. 2012-875SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a nonvolatile random-access memory circuit (MeRAM) that is very dense, fast, and consumes extremely low power.BACKGROUNDRandom-access memory (RAM) is a form of computer data storage that directly affects a computer’s speed. As society becomes heavily...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Dejan Markovic
,
Pedram Khalili Amiri
,
Richard Dorrance
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2017-456 Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read Logic
Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read LogicSUMMARYUCLA researchers in the department of Electrical Engineering have developed a novel magetoelectric device for use as a spin transistor.BACKGROUNDThe search for a novel and scalable logic technology could revolutionize the non-volatile memory market, which will be worth over $80 billion...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Christian Binek
,
Dmitri Nikonov
,
Jonathan Bird
,
Peter Dowben
,
Xia Hong
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Materials > Semiconducting Materials
,
Electrical > Electronics & Semiconductors > Circuits
2014-834 FAST AND LOW-POWER SENSE AMPLIFIER AND WRITING CIRCUIT FOR HIGH-SPEED MRAM
Fast And Low-Power Sense Amplifier And Writing Circuit For High-Speed MRAMSUMMARYThe Device Research Laboratory at UCLA’s Electrical Engineering and Computer Science Department has developed the first specialized control circuit for VCMA-based MRAM devices that is high-speed, low error, and low power.BACKGROUNDMagnetoresistive random access memory...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Juan Alzate Vinasco
,
Hochul Lee
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
Body Voltage Sensing Based Short Pulse Reading Circuit For STT-RAM
SummaryUCLA researchers in the Department of Electrical & Computer Engineering have invented a novel circuit design that performs high speed and reliable data reading operations for resistive device-based memory applications.BackgroundReading circuits perform crucial data reading operations in memory applications, which has a fast-growing multi-billion...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Chih-Kong Yang
,
Dejan Markovic
,
Fengbo Ren
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
Voltage-Controlled Magnetic Memory Element With Canted Magnetization
SummaryUCLA researchers in the Department of Electrical Engineering have developed a method for voltage-controlled switching of the magnetization direction in MeRAM circuits.BackgroundNew random-access memory technologies have been emerging as computer data storage must keep up with the increasing amount of data being generated and processed. One emerging...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Juan Alzate Vinasco
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
Magnetoresistance Sensor With Perpendicular Anisotropy
SummaryUCLA researchers in the Department of Electrical Engineering have invented a novel magnetic sensor design that is highly sensitive and linear, with tunable response and low power consumption.BackgroundMagnetic sensors have broad applications in fields such as automotive industry, medical application and hard disk drive read heads. Current magnetic...
Published: 2/14/2025
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Zhongming Zeng
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Quantum Computing
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