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Charge Trap Transistors - Subramanian Iyer
Background: Due to their chemical makeup and heat generation, devices such as high-k/metal gate (HKMG) CMOS often accumulate charges can lead to variation in integrated circuits. Charge Trap Transistors (CTT's) utilize accumulating charge in semiconducting devices as embedded non-volatile
memory
(eNVM). The introduction of CTT's can prove an...
Published: 7/19/2023
|
Inventor(s):
Subramanian Iyer
Keywords(s):
Charge Carrier
,
CMOS
,
Dynamic Random-Access
Memory
,
Electrical
,
Electrical Engineering
,
Electrical Load
,
Electrical Resistance And Conductance
,
Logic Gate
,
Magnetoresistive Random-Access
Memory
,
Medical Device
,
Memory
,
Power Electronics
,
Power Transmission
,
Programmable Logic Device
,
Random-Access
Memory
,
Resistive Random-Access
Memory
,
Semiconductor Device
,
Semiconductor Device Fabrication
,
Static Random-Access
Memory
,
Transistor
Category(s):
Electrical
,
Electrical > Electronics & Semiconductors >
Memory
,
Electrical > Electronics & Semiconductors
2021-278 Enhancement of Human
Memory
and Treatment of Alzheimer’s Disease by Closed -Loop Phase-Locked Brain Electric Stimulation During Sleep
SUMMARY: UCLA researchers in the department of Neurosurgery have developed an implantable brain electrode system which can modulate the brain’s activity to improve sleep and consolidation of
memory
, several important activities in the treatment of Alzheimer’s Disease. BACKGROUND: Sleep is universally understood to be beneficial to...
Published: 7/19/2023
|
Inventor(s):
Itzhak Fried
,
Yuval Nir
,
Maya Geva-Sagiv
Keywords(s):
Deep Brain Stimulation
,
Deep Brain Stimulation Current Mirror Output Impedance
,
Electrical Brain Stimulation
,
Memory
,
Neurocognitive
,
Neurodegeneration
,
Neurodegeneration Alzheimer's Disease Predictive Testing
,
Neuromodulation
,
Neurostimulation
Category(s):
Medical Devices > Neural Stimulation
,
Medical Devices > Monitoring And Recording Systems
2014-322 MAGNETIC
MEMORY
BITS WITH PERPENDICULAR MAGNETIZATION SWITCHED BY CURRENT-INDUCED SPIN-ORBIT TORQUES
Magnetic
Memory
Bits with Perpendicular Magnetization Switched By Current-Induced Spin-Orbit TorquesTech ID: 30203 / UC Case 2014-322-0SUMMARYUCLA researchers in the Department of Electrical and Computer Engineering have developed a novel spin-orbit-torque (SOT)-controlled magnetic random access memory driven by in-plane currents.BACKGROUNDMagnetization...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors >
Memory
2014-141 METHODS AND SYSTEMS FOR MAGNETOELECTRONIC ELEMENTS AND ARRAYS
Case No. 2014-141SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a magnetoelectric
memory
array, which uses a crossbar architecture to achieve high density.BACKGROUNDExcessive power consumption and manufacturing costs have become chief roadblocks to the further scaling of semiconductors, electronics and systems that...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
,
Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors >
Memory
2014-140 MAGNETOELECTRIC DEVICE HAVING TWO DIELECTRIC BARRIERS
Magnetoelectric Device with Two Dielectric BarriersTech ID: 30169 / UC Case 2014-140-0SUMMARYUCLA researchers in the Department of Electrical and Computer Engineering have developed a magnetoelectric
memory
device that uses two dielectric barriers for improved voltage-controlled magnetic anisotropy (VCMA) and tunnel magnetoresistance (TMR) properties.BACKGROUNDNew...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors >
Memory
2012-876 A READ-DISTURBANCE-FREE NONVOLATILE CONTENT ADRESSABLE
MEMORY
Case No. 2012-876SUMMARYUCLA researchers in the Department of Electrical Engineering have developed read-disturbance-free content addressable
memory
(CAM) using voltage controlled magneto-electric tunnel junctions (MEJs).BACKGROUNDThe electronics industry continuously demands for memory devices with higher density, faster speed, and better reliability....
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Dejan Markovic
,
Richard Dorrance
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors >
Memory
2012-875 A NONVOLATILE MAGNETOELECTRIC RANDOM ACCESS
MEMORY
CIRCUIT
Case No. 2012-875SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a nonvolatile random-access
memory
circuit (MeRAM) that is very dense, fast, and consumes extremely low power.BACKGROUNDRandom-access memory (RAM) is a form of computer data storage that directly affects a computer’s speed. As society becomes heavily...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Dejan Markovic
,
Pedram Khalili Amiri
,
Richard Dorrance
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors >
Memory
Multiple-Bits-Per-Cell Voltage-Controlled Magnetic
Memory
SummaryUCLA researchers in the Department of Electrical and Computer Engineering have developed a new random access
memory
read/write method that achieves new levels of speed, scalability, and memory density.BackgroundMagnetoresistive Random Access Memory (MRAM) is a non-volatile data storage method that uses pairs of magnets to store bits as opposed...
Published: 7/19/2023
|
Inventor(s):
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Materials > Semiconducting Materials
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors >
Memory
Magnetoelastic Spin-Orbit-Torque Ramdom-Access
Memory
(MeSOT-RAM) System
Case 2018-202UCLA researchers in the Department of Mechanical Engineering have developed a non-volatile random-access
memory
(RAM) device which uses magnetoelastic spin-orbit torque (MeSOT).BACKGROUNDMagnetic RAM (MRAM) is a promising memory technology because it possesses non-volatility, high density, and high scalability. Spin Orbit Torque (SOT) MRAM...
Published: 7/19/2023
|
Inventor(s):
Gregory Carman
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors >
Memory