UCLA Researchers & Innovators
Industry & Investors
News & Events
About
Concierge
Search Results - pedram+khalili+amiri
10
Results
Sort By:
Published Date
Updated Date
Title
ID
Descending
Ascending
2014-141 METHODS AND SYSTEMS FOR MAGNETOELECTRONIC ELEMENTS AND ARRAYS
Case No. 2014-141SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a magnetoelectric memory array, which uses a crossbar architecture to achieve high density.BACKGROUNDExcessive power consumption and manufacturing costs have become chief roadblocks to the further scaling of semiconductors, electronics and systems that...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
,
Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2014-140 MAGNETOELECTRIC DEVICE HAVING TWO DIELECTRIC BARRIERS
Magnetoelectric Device with Two Dielectric BarriersTech ID: 30169 / UC Case 2014-140-0SUMMARYUCLA researchers in the Department of Electrical and Computer Engineering have developed a magnetoelectric memory device that uses two dielectric barriers for improved voltage-controlled magnetic anisotropy (VCMA) and tunnel magnetoresistance (TMR) properties.BACKGROUNDNew...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2012-876 A READ-DISTURBANCE-FREE NONVOLATILE CONTENT ADRESSABLE MEMORY
Case No. 2012-876SUMMARYUCLA researchers in the Department of Electrical Engineering have developed read-disturbance-free content addressable memory (CAM) using voltage controlled magneto-electric tunnel junctions (MEJs).BACKGROUNDThe electronics industry continuously demands for memory devices with higher density, faster speed, and better reliability....
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Dejan Markovic
,
Richard Dorrance
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2012-875 A NONVOLATILE MAGNETOELECTRIC RANDOM ACCESS MEMORY CIRCUIT
Case No. 2012-875SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a nonvolatile random-access memory circuit (MeRAM) that is very dense, fast, and consumes extremely low power.BACKGROUNDRandom-access memory (RAM) is a form of computer data storage that directly affects a computer’s speed. As society becomes heavily...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Dejan Markovic
,
Pedram Khalili Amiri
,
Richard Dorrance
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
2015-493 Periodically Rippled Antenna
Periodically Rippled AntennaSUMMARYUCLA researchers in the Department of Electrical Engineering have designed a periodically-rippled microstrip patch antenna for wireless communication systems.BACKGROUNDAdvancements in communication engineering and integration technology demand size reduction of low frequency antennas. Multiband operation and miniaturization...
Published: 7/19/2023
|
Inventor(s):
Mohsen Yazdani
,
Aryan Navabi-Shirazi
,
Pedram Khalili Amiri
,
Kang Wang
Keywords(s):
Antennas/Wireless
,
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Materials > Semiconducting Materials
,
Materials > Fabrication Technologies
,
Electrical > Wireless
2014-834 FAST AND LOW-POWER SENSE AMPLIFIER AND WRITING CIRCUIT FOR HIGH-SPEED MRAM
Fast And Low-Power Sense Amplifier And Writing Circuit For High-Speed MRAMSUMMARYThe Device Research Laboratory at UCLA’s Electrical Engineering and Computer Science Department has developed the first specialized control circuit for VCMA-based MRAM devices that is high-speed, low error, and low power.BACKGROUNDMagnetoresistive random access memory...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Juan Alzate Vinasco
,
Hochul Lee
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
Voltage-Controlled Magnetic Memory Element With Canted Magnetization
SummaryUCLA researchers in the Department of Electrical Engineering have developed a method for voltage-controlled switching of the magnetization direction in MeRAM circuits.BackgroundNew random-access memory technologies have been emerging as computer data storage must keep up with the increasing amount of data being generated and processed. One emerging...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Juan Alzate Vinasco
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
Magnetoresistance Sensor With Perpendicular Anisotropy
SummaryUCLA researchers in the Department of Electrical Engineering have invented a novel magnetic sensor design that is highly sensitive and linear, with tunable response and low power consumption.BackgroundMagnetic sensors have broad applications in fields such as automotive industry, medical application and hard disk drive read heads. Current magnetic...
Published: 7/19/2023
|
Inventor(s):
Kang Wang
,
Pedram Khalili Amiri
,
Zhongming Zeng
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Quantum Computing
Multiple-Bits-Per-Cell Voltage-Controlled Magnetic Memory
SummaryUCLA researchers in the Department of Electrical and Computer Engineering have developed a new random access memory read/write method that achieves new levels of speed, scalability, and memory density.BackgroundMagnetoresistive Random Access Memory (MRAM) is a non-volatile data storage method that uses pairs of magnets to store bits as opposed...
Published: 7/19/2023
|
Inventor(s):
Pedram Khalili Amiri
Keywords(s):
Electronics & Semiconductors
,
Memory
Category(s):
Electrical > Electronics & Semiconductors
,
Materials > Semiconducting Materials
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory
Voltage-Controlled Magnetic Tunnel Junction Switch
SummaryUCLA researchers in the Department of Electrical Engineering have developed a voltage-controlled magnetic tunnel junction switch that can switch the magnetization of a magnetic bit (i.e. in a free layer) from one state to another using an applied voltage.BackgroundThe electronics industry continuously seeks for higher density devices that incorporate...
Published: 7/19/2023
|
Inventor(s):
Pedram Khalili Amiri
,
Kang Wang
,
Kosmas Galatsis
Keywords(s):
Electronics & Semiconductors
Category(s):
Electrical > Electronics & Semiconductors
,
Electrical > Electronics & Semiconductors > Circuits
,
Electrical > Electronics & Semiconductors > Memory