Search Results - molybdenum+disulfide+(mos2)

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A Chemical-Dedoping Strategy to Tailor Electron Density in Molecular-Intercalated Bulk Monolayer MOS2 (Case No. 2024-022)
Summary: UCLA researchers in the Department of Chemistry & Biochemistry have developed a novel strategy to decouple the interlayer interactions in bulk MoS2 to produce a bulk material with desirable monolayer properties. Background: Molybdenum disulfide (MoS2) is a popular and well-studied 2D semiconducting layered material. A single layer, or...
Published: 3/13/2024   |   Inventor(s): Xiangfeng Duan, Yu Huang, Boxuan Zhou
Keywords(s): bulk material, bulk monolayer, chemical dedoping, direct bandgap, Doping (Semiconductor), Electronics & Semiconductors, exciton, indirect bandgap, intercalated materials, Microelectronics Semiconductor Device Fabrication, molybdenum disulfide (MOS2), monolayer, Optoelectronic materials, Organic Semiconductor, photoluminescence, photon absorption, Semiconductor, semiconductor chip foundries, Semiconductor Device, Semiconductor Device Fabrication, Semiconductor Ohmic Contact, Semiconductor Risk Assessment, Semiconductor Sapphire, Semiconductors, spin polarization, valley polarization, zzsemiconducting materials
Category(s): Materials, Materials > Functional Materials, Materials > Semiconducting Materials, Electrical, Electrical > Electronics & Semiconductors