Search Results - transistors

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Method for Reducing Process Variation-Induced Threshold Voltage Mismatch in FD-SOI Transistors (Case No. 2025-271)

Summary: UCLA researchers in the Department of Electrical and Computer Engineering have developed a transistor-level method that dynamically tunes device characteristics to eliminate mismatch, achieving higher stability and precision without added area or power costs. Background: Transistors are the fundamental semiconductor building blocks for amplification,...

Published: 10/23/2025 | Inventor(s): Subramanian Iyer, Siyun Qiao, Jacklyn Zhu, Samuel Wang

Keywords(s): device stability, Electronics & Semiconductors, frequency modulation, Integrated Circuit, Integrated Circuit Via (Electronics), Microelectronics Semiconductor Device Fabrication, Mixed-Signal Integrated Circuit, Semiconductor, Semiconductor Device, Semiconductor Device Fabrication, Semiconductors, Signal Processing, Silicon, Transistor, transistors

Category(s): Electrical, Electrical > Signal Processing, Electrical > Instrumentation, Electrical > Electronics & Semiconductors, Software & Algorithms, Software & Algorithms > Communication & Networking

HFSIO as Gate Insulator for N-Polar Gan HEMTs (Case No. 2024-268)

Summary: Researchers in the UCLA Department of Electrical and Computer Engineering have developed a new, high-performance transistor for high-frequency and high-power systems. Background: Gallium nitride (GaN) high electron mobility transistors (HEMTs) are critical for high-frequency and high-power electrical applications due to their superior material...

Published: 6/12/2025 | Inventor(s): Elaheh Ahmadi, Oguz Odabasi, Xin Zhai

Keywords(s): atomic layer deposition, dielectric gates, field-effect transistors (FETs), gallium nitride, GaN, G-polar GAN, hafnium silicon oxide, HfSiO, high dielectric constant materials, high electron mobility transistors, high electron mobility transistors (HEMTs), high frequency electronics, high power electronics, N-polar GAN, organic field effect transistors, quality control manufacturing, scalable manufacturing, solid-state thermal transistor, strength-thermal stability, thermal stability, thermal transistor, Thin-Film Transistor, Transistor, transistors

Category(s): Chemical, Chemical > Chemical Processing & Manufacturing, Electrical, Electrical > Electronics & Semiconductors, Materials, Materials > Semiconducting Materials, Materials > Metals

Field-Effect Transistor Biosensors Integrated With Porous Media (Case No. 2023-093)

Summary: UCLA researchers in the Department of Electrical and Computer Engineering in collaboration with the University of Chicago have developed a new diagnostic biosensor by combining field-effect transistors with porous media. Background: Point-of-care (POC) and self-testing tools rely on the real-time monitoring of biomarkers in bodily fluids....

Published: 2/14/2025 | Inventor(s): Aydogan Ozcan, Hyouarm Joung, Hyun-June Jang, Junhong Chen

Keywords(s): Biomarker, biomarkers, Biomaterial, Biosensor, Computer-Aided Diagnosis, Diagnostic Markers & Platforms, Diagnostic Platform Technologies (E.G. Microfluidics), Diagnostic Test, Electrical, Electrical Engineering, electrically-mediated sensing, electrochemical sensors, enzyme functionalization, field-effect transistors (FETs), Medical diagnostics, multiplexed analysis, Point Of Care, point-of-care, porous media, sample matrix effects, transistors

Category(s): Electrical, Electrical > Sensors, Medical Devices, Medical Devices > Monitoring And Recording Systems, Diagnostic Markers, Diagnostic Markers > Targets And Assays, Platforms, Platforms > Diagnostic Platform Technologies